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TGA2611-SM Datasheet(PDF) 3 Page - TriQuint Semiconductor |
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TGA2611-SM Datasheet(HTML) 3 Page - TriQuint Semiconductor |
3 / 14 page TGA2611-SM 2-6 GHz GaN LNA Preliminary Datasheet: Rev - 01-29-15 - 3 of 14 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance ( θJC) (1) Tbase = 85 °C, VD = 10 V (CW) IDQ = 100 mA, ID_Drive = 195 mA PIN = 10 dBm, POUT = 28 dBm, Freq = 4 GHz, PDISS = 1.3 W 19 ºC/W Channel Temperature (TCH) (Under RF drive) 110 °C Median Lifetime (TM) 2.3 x 10^11 Hrs Notes: 1. Thermal resistance measured at back of the package. Test Conditions: VD = 40 V; Failure Criteria is 10% reduction in ID_MAX 16 17 18 19 20 21 22 0.5 1.0 1.5 2.0 2.5 3.0 P DISS (W) Thermal Resistance vs. P DISS T BASE = 85 0C, CW 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) P DISS vs. Frequency vs. TBASE 85 °C 25 °C -40 °C V D = 10 V, IDQ = 100 mA, PIN = 10 dBm, CW |
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