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TGA2611-SM Datasheet(PDF) 3 Page - TriQuint Semiconductor

Part # TGA2611-SM
Description  2 6 GHz GaN LNA
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2611-SM Datasheet(HTML) 3 Page - TriQuint Semiconductor

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TGA2611-SM
2-6 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
- 3 of 14 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (
θJC) (1)
Tbase = 85 °C, VD = 10 V (CW)
IDQ = 100 mA, ID_Drive = 195 mA
PIN = 10 dBm, POUT = 28 dBm,
Freq = 4 GHz, PDISS = 1.3 W
19
ºC/W
Channel Temperature (TCH) (Under RF drive)
110
°C
Median Lifetime (TM)
2.3 x 10^11
Hrs
Notes:
1. Thermal resistance measured at back of the package.
Test Conditions: VD = 40 V; Failure Criteria is 10% reduction in ID_MAX
16
17
18
19
20
21
22
0.5
1.0
1.5
2.0
2.5
3.0
P
DISS (W)
Thermal Resistance vs. P
DISS
T
BASE = 85
0C, CW
0.9
1.0
1.1
1.2
1.3
1.4
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Frequency (GHz)
P
DISS vs. Frequency vs. TBASE
85 °C
25 °C
-40 °C
V
D = 10 V, IDQ = 100 mA, PIN = 10 dBm, CW


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