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TGA2621-SM Datasheet(PDF) 9 Page - TriQuint Semiconductor |
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TGA2621-SM Datasheet(HTML) 9 Page - TriQuint Semiconductor |
9 / 13 page TGA2621-SM 16 – 18.5 GHz 1 W GaAs Power Amplifier Preliminary Datasheet: Rev - 11-07-14 - 9 of 13 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Application Information Bias-up Procedure 1. Set ID limit to 1000 mA, IG limit to 4 mA 2. Apply -2 V to VG for pinch off 3. Apply +6 V to VD 4. Adjust VG more positive until IDQ = 500 mA (VG ~ -0.6 V Typical) 5. Apply RF signal Bias-down Procedure 1. Turn off RF signal 2. Reduce VG to -2 V. Ensure IDQ ~ 0mA 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1, 2, 4, 6, 8-9, 16-17, 19, 21, 23-25, 32 Gnd Recommend grounding on PCB 3, 7, 10-15, 18, 22, 26, 28, 30 N/C No Internal Connection 5 RFIN Input; matched to 50 Ω; DC blocked 20 RFOUT Output; matched to 50 Ω; DC blocked 27, 29 VD1, VD2 Drain voltage; bias network is required; see recommended Application Information above. 31 VG Gate voltage; bias network is required; see recommended Application Information above. 33 Gnd Ground Paddle. Multiple vias should be employed to minimize inductance and thermal resistance. |
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