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TGA2621-SM Datasheet(PDF) 9 Page - TriQuint Semiconductor

Part # TGA2621-SM
Description  16 to 18.5 GHz 1 W GaAs Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2621-SM Datasheet(HTML) 9 Page - TriQuint Semiconductor

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TGA2621-SM
16
– 18.5 GHz 1 W GaAs Power Amplifier
Preliminary Datasheet: Rev - 11-07-14
- 9 of 13 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Application Information
Bias-up Procedure
1. Set ID limit to 1000 mA, IG limit to 4 mA
2. Apply -2 V to VG for pinch off
3. Apply +6 V to VD
4. Adjust VG more positive until IDQ = 500 mA
(VG ~ -0.6 V Typical)
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to -2 V. Ensure IDQ ~ 0mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pin No.
Symbol
Description
1, 2, 4, 6, 8-9, 16-17, 19, 21, 23-25, 32
Gnd
Recommend grounding on PCB
3, 7, 10-15, 18, 22, 26, 28, 30
N/C
No Internal Connection
5
RFIN
Input;
matched to 50 Ω; DC blocked
20
RFOUT
Output;
matched to 50 Ω; DC blocked
27, 29
VD1, VD2
Drain voltage; bias network is required; see recommended
Application Information above.
31
VG
Gate voltage; bias network is required; see recommended
Application Information above.
33
Gnd
Ground Paddle. Multiple vias should be employed to
minimize inductance and thermal resistance.


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