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TGA2623-CP Datasheet(PDF) 5 Page - TriQuint Semiconductor

Part # TGA2623-CP
Description  10 to 11 GHz 32 W GaN Power Amplifier
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGA2623-CP Datasheet(HTML) 5 Page - TriQuint Semiconductor

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TGA2623-CP
10
– 11 GHz 32 W GaN Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
- 5 of 15 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Typical Performance: Large Signal (Pulsed Operation)
23
24
25
26
27
28
29
30
9.5
10
10.5
11
11.5
Frequency (GHz)
Power Gain vs. Frequency vs. V
D
Vd=25V
Vd=28V
Vd=30V
P
IN = 18dBm
Temp. = +25 C
I
DQ = 290mA
Pulsed: PW=100us, DC=10%
23
24
25
26
27
28
29
30
9.5
10
10.5
11
11.5
Frequency (GHz)
Power Gain vs. Frequency vs. Temp.
-40C
+25C
+85C
P
IN = 18dBm
V
D = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
29
32
35
38
41
44
47
50
9.5
10
10.5
11
11.5
Frequency (GHz)
PAE vs. Frequency vs. Temperature
-40C
+25C
+85C
P
IN = 18dBm
V
D = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
29
32
35
38
41
44
47
50
9.5
10
10.5
11
11.5
Frequency (GHz)
PAE vs. Frequency vs. V
D
Vd=25V
Vd=28V
Vd=30V
P
IN = 18dBm
Temp. = +25 C
I
DQ = 290mA
Pulsed: PW=100us, DC=10%
15
20
25
30
35
40
45
50
2
4
6
8
10
12
14
16
18
20
Input Power (dBm)
PAE vs. Input Power vs. Temperature
-40C
+25C
+85C
V
D = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
Freq. = 10.5GHz
24
26
28
30
32
34
36
38
40
2
4
6
8
10
12
14
16
18
20
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
-40C
+25C
+85C
V
D = 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
Freq. = 10.5GHz


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