STT3922N_15 datasheet(2/2 Pages) SECOS

Part #	STT3922N

Description	N-Channel Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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STT3922N

4.1A, 20V, RDS(ON) 47mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

22-Jun-2012 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

0.4

-

V

VDS=VGS, ID=250µA

Gate-Body Leakage

IGSS

-

1

µA

VDS=0, VGS=8V

Zero Gate Voltage Drain Current

IDSS

-

0.1

µA

VDS=16V, VGS=0

-

1

VDS=16V, VGS=0, TJ= 55°C

On-State Drain Current

1

ID(on)

30

-

A

VDS =5V, VGS=4.5V

Drain-Source On-Resistance

1

RDS(ON)

-

47

m

VGS=4.5V, ID=4.1A

-

55

VGS=2.5V, ID=3.8A

Forward Transconductance

1

gfs

-

10

-

S

VDS=10V, ID=4.1A

Diode Forward Voltage

VSD

-

0.8

-

V

IS=1.05A, VGS=0

Dynamic

2

Total Gate Charge

Qg

-

7.5

-

nC

VDS=10V,

VGS=4.5V,

ID=4.1A

Gate-Source Charge

Qgs

-

0.6

-

Gate-Drain Charge

Qgd

-

1

-

Turn-on Delay Time

Td(on)

-

5

-

nS

VDD=10V,

VGS=4.5V,

ID=1A,

RGNE=15

Rise Time

Tr

-

12

-

Turn-off Delay Time

Td(off)

-

13

-

Fall Time

Tf

-

7

-

Notes:

1.

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.

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