Electronic Components Datasheet Search |
|
JANTX2N6760 Datasheet(PDF) 2 Page - International Rectifier |
|
JANTX2N6760 Datasheet(HTML) 2 Page - International Rectifier |
2 / 6 page Thermal Resistance Parameter Min. Typ. Max. Units Test Conditions RthJC Junction-to-Case — — 1.67 RthJA Junction-to-Ambient — — 30 K/W Typical socket mount Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 5.5 Modified MOSFET symbol showing the ISM Pulse Source Current (Body Diode) —— 22 integral reverse p-n junction rectifier. VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 5.5A, VGS = 0V trr Reverse Recovery Time — — 700 ns Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 6.2 µCVDD ≤ 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0 mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0 mA Voltage RDS(on) Static Drain-to-Source — — 1.00 VGS = 10V, ID = 3.5A On-State Resistance — — 1.22 Ω VGS = 10V, ID = 5.5A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.9 — — S ( )VDS > 15V, IDS = 3.5A IDSS Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V — — 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge 17 — 39 VGS = 10V, ID = 5.5A Qgs Gate-to-Source Charge 2.0 — 6.0 VDS = Max. Rating x 0.5 Qgd Gate-to-Drain (“Miller”) Charge 8.0 — 20 see figures 6 and 13 td(on) Turn-On Delay Time — — 30 VDD = 200V, ID = 5.5A, tr Rise Time — — 40 RG = 7.5Ω,VGS = 10V td(off) Turn-Off Delay Time — — 80 tf Fall Time — — 35 see figure 10 LD Internal Drain Inductance — 5.0 — LS Internal Source Inductance — 13.0 — Ciss Input Capacitance — 620 — VGS = 0V, VDS = 25V Coss Output Capacitance — 200 — f = 1.0 MHz Crss Reverse Transfer Capacitance — 75 — see figure 5 JANTX2N6760, JANTXV2N6760 Device µA nC pF nH ns Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. nA A Next Data Sheet Index Previous Datasheet To Order |
Similar Part No. - JANTX2N6760 |
|
Similar Description - JANTX2N6760 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |