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AN1453 Datasheet(PDF) 5 Page - STMicroelectronics

Part # AN1453
Description  NEW FAMILY OF 150V POWER SCHOTTKY
Download  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1453 Datasheet(HTML) 5 Page - STMicroelectronics

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APPLICATION NOTE
5/9
Without a snubber, in this example the diode is
repeatedly in conduction because the oscillation is
very strong. Furthermore, the voltage is close to
the breakdown voltage. This means that the
system is no longer reliable and a snubber circuit is
necessary.
On these 2 oscillograms, we can see that the value
of the maximum reverse current (IRM) is defined
when the reverse voltage rises (typical behaviour
of a bipolar diode). At this time the voltage is not
fixed by the diode.
The curve Qrr,IRR versus dIF/dt and Tj is given in
the datasheet. For example in Fig. 12, the
evolution of IRM versus dIF/dt for a STPR1620CT
can be observed.
It can be also noticed, that the parameter IRM
significantly increases with the temperature.
In continuous mode the dIF/dt (few hundred A/µs)
is fixed by the leakage inductance and the reverse
voltage (VR):
dI
dt
V
L
with V
n
n
VV
FR
f
R
s
p
IN
out
==
+
It is many time higher than in discontinuous mode
(lower than 1A/µs):
dI
dt
V
LL
withL
L
F
out
Sf
Sf
=
+
〉〉
(LS: Secondary inductance)
Thus, with this curve we can see that, in
continuous mode (high dIF/dt), the bipolar diode
must evacuate a non-negligible charge, which
means a higher IRM. This is verified on oscillogram
Fig. 11.
With this value of IRM, an equivalent model at t0
with a snubber circuit can be established:
Where:
Vs: secondary voltage
V
n
n
V
S
s
p
IN
=⋅
Lf: leakage inductance of the transformer
Cj: junction capacitance
CQrrb:
equivalent
capacitance
modeling
the
reverse charge, necessary for the establishment of
the potential barrier, which supports the reverse
voltage.
Vout: output voltage
With the following initial conditions at t=t0:
I
I
and V
0
LRM
D
f
bipolar
=≈
The equivalent schematic can be used to define
VV
DRmax
=
NB:
1) Without snubber, there is a L f, C circuit
( C=C j +C Qrrb) which lead to a second order
differential equation:
dV
dt
V
V
0 and
1 / L
C
2
C
2
CR
f
+⋅
+⋅
=
=
ωω
ω
0
2
0
2
0
2
with initial conditions at t=t0:
I
I
and V
V
0
LRM
C
D
f0
==
=
In this equation, an approximation is made with C
constant, because in reality Cj and CQrrb vary with
the voltage applied.
The solution of the differential equation gives us:
VV
V
V
I
L
C
RD
R
R
2
RM
f
2
max
==
+
+


Therefore we can see that the VRmax depends the
leakage inductance (Lf) and on recovery charge
(IRM). Thus, V
Rmax
is very dependent on the
temperature.
STPR1620CG/CT
10
20
50
100
200
500
1
10
20
dIF/dt(A/µs)
IRM(A)
IF=IF(av) 90% confidence
Tj=125°C
Fig. 12: Peak reverse recovery current versus
dIF/dt (per diode)
V
D
V
D
V
s
L
s
n
p
L
P
R
s
C
s
C
Qrrb
C
j
C
s
R
s
L
f
I=I
L f
RM
n
s
V= V + V
R
S
o u t
V
o u t
Fig. 13: Equivalent model at t0 for a bipolar diode


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