4

TGA4036

May 2009 © Rev -

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

TABLE IV

THERMAL INFORMATION

PARAMETER

TEST CONDITIONS

(°C)

(°C/W)

Tm

(HRS)

(channel to Case)

Vd = 5 V

Id = 160 mA

Pdiss = 0.80 W

112

51.9

3.4E+7

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70 °C baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature