TGA4502-SCC

4

TriQuint Semiconductor Texas Phone: www.triquint.com (972)994-8465 Fax (972)994 8504 Info-mmw@tqs.com

Oct 2008 © Rev -

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

Tchannel

(

θ

θ

θ

(°°°°C/W)

Tm

(HRS)

(channel to backside of

carrier)

Vd = 7 V

Id = 760 mA

Pdiss = 5.3 W

150

15.1

1 E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil

CuMo Carrier at 70

applied, 100% of DC power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

25

50

75

100

125

150

175

200

Channel Temperature ( C)

FET3

°