Advance Product Information

February 14, 2008

3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TABLE III

ELECTRICAL CHARACTERISTICS

TGA4513

PARAMETER

TYPICAL

UNITS

Drain Operating

6

V

Quiescent Current

840

mA

Small Signal Gain, S21

20

dB

Input Return Loss, S11

14

dB

Output Return Loss, S22

14

dB

Reverse Isolation, S12

-40

dB

Output Power @ 1 dB Compression Gain, P1dB

> 32

dBm

Power @ saturated, Psat

33

dBm

IMR3 @ 18 dBm SCL

37

dBc

TABLE II

DC PROBE TESTS

SYMBOL

PARAMETER

MINIMUM

MAXIMUM

VALUE

Saturated Drain Current

60

282

V

Transconductance

132

318

mS

Breakdown Voltage gate-source

-30

-8

V

Breakdown Voltage gate-drain

-30

-11

V

Pinch-off Voltage

-1.5

-0.5

V

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

(°°°°C)

θθθθ

JC

(°°°°C/W)

(hrs)

θ

(Channel Case)

Tbase = 70 °C

130.1

11.92

5.9 E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at

70

dissipated.