IRFF9220

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

6.25

RthJA

Junction-to-Ambient

—

—

175

Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-2.5

ISM

Pulse Source Current (Body Diode) ➀

—

—

-10

VSD

Diode Forward Voltage

—

—

-4.8

V

trr

Reverse Recovery Time

—

—

300

nS

Tj = 25°C, IF = -2.5.A, di/dt ≤ -100A/µs

QRR

Reverse Recovery Charge

—

—

3.0

µC

VDD ≤ -50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.22

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

1.5

VGS = -10V, ID = -1.6A ➃

Resistance

—

—

1.725

VGS =-10V, ID =-2.5A ➃

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

1.0

—

—

S ( )

VDS > -15V, IDS = -1.6A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS= -160V, VGS=0V

—

—

-250

µA

VDS = -160V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

1 0 0

nA

VGS = 20V

Qg

Total Gate Charge

4.0

—

1 5

VGS =-10V, ID = -2.5A

Qgs

Gate-to-Source Charge

1.1

—

3.2

nC

VDS= -100V

Qgd

Gate-to-Drain (‘Miller’) Charge

0.8

—

8.4

Turn-On Delay Time

—

—

5 0

VDD = -100V, ID = -2.5A,

t r

Rise Time

—

—

7 0

RG =7.5Ω

Turn-Off Delay Time

—

—

4 0

tf

Fall Time

—

—

5 0

LS + LD

Total Inductance

—

7.0

—

Ciss

Input Capacitance

—

330

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

100

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

3 3

—

nH

ns

Ω

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)