RJK2508DPK_15 datasheet(3/7 Pages) RENESAS

Part #	RJK2508DPK

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

RJK2508DPK

Preliminary

REJ03G0508-0300 Rev.3.00

Page 3 of 6

Jun 30, 2010

Main Characteristics

200

150

100

50

0

50

100

150

200

100

80

60

40

20

0

48

12

16

20

100

80

60

40

20

0

2

46

8

10

Case Temperature

Tc (

°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

6

4

2

0

48

12

16

20

1

30

100

3

10

300

1000

0.2

0.1

0.05

1

0.5

0.00

0.01

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

8

300

100

30

10

0.3

0.1

3

1

0.10.31

3

10

30

300 1000

0.03

0.001

0.01

0.003

1000

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

100

ID = 50 A

25 A

10 A

Pulse Test

VGS = 5 V

6 V

Tc =

−25°C

25

°C

75

°C

Pulse Test

VDS = 10 V

Pulse Test

7 V

8 V

VGS = 10 V

5.5 V

6.5 V

7.5 V

Ta = 25

°C

Operation in

this area is

limited by RDS(on)

10

μs

PW

=

1 m

s

(1

shot)

100

μs

8.5 V

10 V

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