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HAF2007(L) Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HAF2007(L) Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 11 page HAF2007(L), HAF2007(S) Rev.4.00 Sep 07, 2005 page 3 of 8 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions ID1 4 — — A VGS = 3.5 V, VDS = 2 V Drain current ID2 — — 10 mA VGS = 1.2 V, VDS = 2 V Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0 V (BR) GSS 16 — — V IG = 300 µA, VDS = 0 Gate to source breakdown voltage V (BR) GSS –2.5 — — V IG = –100 µA, VDS = 0 IGSS1 — — 100 µA VGS = 8 V, VDS = 0 IGSS2 — — 50 µA VGS = 3.5 V, VDS = 0 IGSS3 — — 1 µA VGS = 1.2 V, VDS = 0 Gate to source leak current IGSS4 — — –100 µA VGS = –2.4 V, VDS = 0 IGS (op) 1 — 0.8 — mA VGS = 8 V, VDS = 0 Input current (shut down) IGS (op) 2 — 0.35 — mA VGS = 3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS (off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V Forward transfer admittance |yfs| 4 7.5 — S ID = 2.5 A, VDS = 10 V Note 3 RDS (on) — 73 120 m Ω ID = 2.5 A, VGS = 4 V Note 3 Static drain to source on state resistance RDS (on) — 55 75 m Ω ID = 2.5 A, VGS = 10 V Note 3 Output capacitance Coss — 270 — pF VDS = 10 V, VGS = 0 f = 1 MHz Turn-on delay time td (on) — 2.8 — µs Rise time tr — 12.4 — µs Turn-off delay time td (off) — 15 — µs Fall time tf — 11 — µs ID = 2.5 A VGS = 5 V RL = 12 Ω Body-drain diode forward voltage VDF — 0.9 — V IF = 5 A, VGS = 0 Body-drain diode reverse recovery time trr — 140 — ns IF = 5 A, VGS = 0 diF/dt = 50 A/ µs tos1 — 1.1 — ms VGS = 5 V, VDD = 16 V Over load shut down operation time Note4 tos2 — 0.57 — ms VGS = 5 V, VDD = 24 V Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. |
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