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RGBC40M Datasheet(PDF) 2 Page - International Rectifier

Part # RGBC40M
Description  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

RGBC40M Datasheet(HTML) 2 Page - International Rectifier

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C-314
IRGBC40M
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
59
80
IC = 24A
Qge
Gate - Emitter Charge (turn-on)
8.6
10
nC
VCC = 400V
Qgc
Gate - Collector Charge (turn-on)
25
42
VGE = 15V
td(on)
Turn-On Delay Time
26
TJ = 25°C
tr
Rise Time
37
ns
IC = 24A, VCC = 480V
td(off)
Turn-Off Delay Time
240
410
VGE = 15V, RG = 10Ω
tf
Fall Time
230
420
Energy losses include "tail"
Eon
Turn-On Switching Loss
0.75
Eoff
Turn-Off Switching Loss
1.65
mJ
Ets
Total Switching Loss
2.4
3.6
tsc
Short Circuit Withstand Time
10
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω, VCPK < 500V
td(on)
Turn-On Delay Time
28
TJ = 150°C,
tr
Rise Time
37
ns
IC = 24A, VCC = 480V
td(off)
Turn-Off Delay Time
380
VGE = 15V, RG = 10Ω
tf
Fall Time
460
Energy losses include "tail"
Ets
Total Switching Loss
4.5
mJ
LE
Internal Emitter Inductance
7.5
nH
Measured 5mm from package
Cies
Input Capacitance
1500
VGE = 0V
Coes
Output Capacitance
190
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
20
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
20
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.70
V/°C
VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
2.0
3.0
IC = 24A
VGE = 15V
2.6
V
IC = 40A
2.4
IC = 24A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
5.5
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-12
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
12
S
VCE = 100V, IC = 24A
ICES
Zero Gate Voltage Collector Current
250
µA
VGE = 0V, VCE = 600V
1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω
Pulse width
≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following:
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
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