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IRHN8150 Datasheet(PDF) 2 Page - International Rectifier |
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IRHN8150 Datasheet(HTML) 2 Page - International Rectifier |
2 / 14 page Thermal Resistance Parameter Min. Typ. Max. Units Test Conditions RthJC Junction-to-Case — — 0.83 K/W RthJ-PCB Junction-to-PC board — TBD — soldered to a copper-clad PC board Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 34 Modified MOSFET symbol showing the ISM Pulse Source Current (Body Diode) — — 136 integral reverse p-n junction rectifier. VSD Diode Forward Voltage — — 1.9 V Tj = 25°C, IS = 34A, VGS = 0V t rr Reverse Recovery Time — — 570 ns Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 5.8 µCVDD ≤ 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0 mA Voltage RDS(on) Static Drain-to-Source — 0.055 VGS = 12V, ID = 21A On-State Resistance — 0.066 Ω VGS = 12V, ID = 34A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA gfs Forward Transconductance 8.0 — S ( )VDS ≥ 15V, IDS = 21A IDSS Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V — — 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 160 VGS =12V, ID = 34A Qgs Gate-to-Source Charge — — 35 VDS = Max. Rating x 0.5 Qgd Gate-to-Drain (‘Miller’) Charge — — 65 td(on) Turn-On Delay Time — — 45 VDD = 50V, ID = 34A, tr Rise Time — — 190 RG = 2.35Ω td(off) Turn-Off Delay Time — — 170 tf Fall Time — — 130 LD Internal Drain Inductance — 0.8 — LS Internal Source Inductance — 2.8 — Ciss Input Capacitance — 4300 — VGS = 0V, VDS = 25V Coss Output Capacitance — 1200 — f = 1.0 MHz Crss Reverse Transfer Capacitance — 200 — (see figure 22) IRHN7150, IRHN8150 Devices Pre-Radiation µA nC pF nH ns Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. nA A (see figure 28) (see figures 23 and 31) Next Data Sheet Index Previous Datasheet To Order |
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