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UD6007 Datasheet(PDF) 2 Page - Unitpower Technology Limited |
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UD6007 Datasheet(HTML) 2 Page - Unitpower Technology Limited |
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2 / 4 page  2 P-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-6A --- 140 170 RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=-4A --- 175 215 m Ω VGS(th) Gate Threshold Voltage -1.0 -1.5 -2.5 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA --- 4.08 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-10V , ID=-6A --- 5.8 --- S Qg Total Gate Charge (-4.5V) --- 4.59 --- Qgs Gate-Source Charge --- 1.39 --- Qgd Gate-Drain Charge VDS=-20V , VGS=-4.5V , ID=-6A --- 1.62 --- nC Td(on) Turn-On Delay Time --- 17.4 --- Tr Rise Time --- 5.4 --- Td(off) Turn-Off Delay Time --- 37.2 --- Tf Fall Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A --- 2.4 --- ns Ciss Input Capacitance --- 531 --- Coss Output Capacitance --- 59 --- Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz --- 38 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=-25V , L=0.1mH , IAS=-10A 7.3 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- -8 A ISM Pulsed Source Current 2,6 VG=VD=0V , Force Current --- --- -16 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-15.3A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics UD6007 |
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