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TGA4906-SM Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TGA4906-SM Datasheet(HTML) 2 Page - TriQuint Semiconductor |
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2 / 18 page  TGA4906-SM 4 Watt Ka-Band Power Amplifier Datasheet: Rev H 8-13-14 - 2 of 18 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range -40 +85 °C Vd 6 V Idq 1.6 A Id_drive (Under RF Drive) 3.0 A Id_drive (Under RF Drive) 1/ 2.0 A Vg -0.7 V Ig 1 mA Ig_drive (Under RF drive) -5 14 mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 1/ For operation above 30 GHz, stability is degraded for large signal drain current less than 2.0 A. Absolute Maximum Ratings Parameter Rating Drain Voltage,Vd +6.5 V Gate Voltage,Vg -5 to 0 V Drain to Gate Voltage, Vd – Vg 11 V Drain Current, Id 3.7 A Gate Current, Ig -15 to 94 mA Power Dissipation, Pdiss 24 W RF Input Power, CW, T = 25 °C 26 dBm Channel Temperature, Tch 200 °C Mounting Temperature (30 sec) 260 °C Storage Temperature -40 to 150 °C Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: Vd =+6V, Idq = 1.6A, Vg= -0.7V Typical, Temp= +25°C Z0: 50 Ώ Parameter Conditions Min Typ Max Units Operational Frequency Range 28 31 GHz Gain 22 dB Input Return Loss 12 dB Output Return Loss 6 dB Output Power @ Saturation 36 dBm 28 to < 29 GHz 34 dBm 29 to < 30 GHz 35 dBm 30 to < 31 GHz 33 dBm Output Power @ 1dB Gain Compression 34.5 dBm Output TOI @ 20 dBm/Tone Pout/tone 38 dBm Gain Temperature Coefficient -0.05 dB/°C Saturated Output Power Temperature Coefficient -0.01 dB/°C |
Similar Part No. - TGA4906-SM_15 |
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Similar Description - TGA4906-SM_15 |
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