TGA4916

Recommended Assembly Diagram

20

Vg 1,2,3

Top + Bot

RF IN

0.1

uF

F

1

0.1

uF

RF OUT

0.1

uF

1 F

Vd 1,2,3

Top

11

Sept 2010 © Rev C

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

1/

Bond only to hatched bond pads, designated in blue. Bonding to other areas may damage MMIC.

2/

For optimal performance, RF Input and RF Output should be bonded with 4 wires, using wedge

bonding, or a gold ribbon. Alternatively, 3 ball bonds can be used.

3/

All DC connections from 0.1 uF decoupling caps to chip should have 2 bonds.

0.1

uF

Vd 1,2,3

Bottom

0.1

uF

0.1

uF

1 F