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HAF2027(L) Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HAF2027(L) Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 11 page HAF2027(L), HAF2027(S) REJ03G1674-0100 Rev.1.00 May 21, 2008 Page 3 of 8 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ID1 80 — — A VGS = 6 V, VDS = 10 V Note3 ID2 15 — — A VGS = 3.5 V, VDS = 10 V Note3 Drain current ID3 — — 10 mA VGS = 1.2 V, VDS = 10 V Note3 Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 V(BR)GSS 16 — — V IG = 300 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –2.5 — — V IG = –100 µA, VDS = 0 IGSS1 — — 100 µA VGS = 6 V, VDS = 0 IGSS2 — — 50 µA VGS = 3.5 V, VDS = 0 IGSS3 — — 1 µA VGS = 1.2 V, VDS = 0 Gate to source leak current IGSS4 — — –100 µA VGS = –2.4 V, VDS = 0 IGS(OP)1 — 0.6 — mA VGS = 6 V, VDS = 0 Input current (shut down) IGS(OP)2 — 0.35 — mA VGS = 3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cut off voltage VGS(off) 1.0 — 2.25 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 15 65 — S ID = 25 A, VDS = 10 V Note3 RDS(on) — 7.7 10 m Ω ID = 25 A, VGS = 10 V Note3 Static drain to source on state resistance RDS(on) — 10.3 15 m Ω ID = 25 A, VGS = 4 V Note3 Output capacitance Coss — 1423 — pF VDS = 10 V, VGS = 0, f = 1MHz Turn-on delay time td(on) — 10 — µs Rise time tr — 48 — µs Turn off delay time td(off) — 22 — µs Fall time tf — 23 — µs VGS = 10 V, ID= 25 A, RL = 1.2 Ω Body-drain diode forward voltage VDF — 0.9 — V IF = 50 A, VGS = 0 Body-drain diode reverse recovery time trr — 102 — ns IF = 50 A, VGS = 0, diF/dt = 100 A/ µs tos1 — 0.7 — ms VGS = 5 V, VDD = 16 V Over load shut down operation time Note4 tos2 — 0.43 — ms VGS = 5 V, VDD = 24 V Notes: 3. Pulse test 4. Including the junction temperature rise of the over lorded condition. |
Similar Part No. - HAF2027(L)_15 |
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Similar Description - HAF2027(L)_15 |
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