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TGF2023-2-10 Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # TGF2023-2-10
Description  50 Watt Discrete Power GaN on SiC HEMT
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TGF2023-2-10 Datasheet(HTML) 1 Page - TriQuint Semiconductor

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TGF2023-2-10
50 Watt Discrete Power GaN on SiC HEMT
Datasheet: Rev C 09-27-13
- 1 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Applications
Defense & Aerospace
Broadband Wireless
Ordering Information
Part
ECCN
Description
TGF2023-2-10
3A001b.3.b
50 Watt GaN HEMT
Functional Block Diagram
Pad Configuration
Pad No.
Symbol
1-8
VG / RF IN
9
VD / RF OUT
Backside
Source / Ground
Product Features
Frequency Range: DC - 18 GHz
47.3 dBm Nominal PSAT at 3 GHz
69.5% Maximum PAE
19.8 dB Nominal Power Gain at 3 GHz
Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA
Technology: TQGaN25 on SiC
Chip Dimensions: 0.82 x 2.48 x 0.10 mm
General Description
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN
on SiC HEMT which operates from DC-18 GHz. The
TGF2023-2-10 is designed using TriQuint’s proven
TQGaN25 production process. This process features
advanced field plate techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2023-2-10 typically provides 47.4 dBm of
saturated output power with power gain of 19.8 dB at 3
GHz. The maximum power added efficiency is 69.5 %
which makes the TGF2023-2-10 appropriate for high
efficiency applications.
Lead-free and RoHS compliant


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