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TGF2023-2-10 Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGF2023-2-10 Datasheet(HTML) 1 Page - TriQuint Semiconductor |
1 / 14 page TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Datasheet: Rev C 09-27-13 - 1 of 14 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Applications • Defense & Aerospace • Broadband Wireless Ordering Information Part ECCN Description TGF2023-2-10 3A001b.3.b 50 Watt GaN HEMT Functional Block Diagram Pad Configuration Pad No. Symbol 1-8 VG / RF IN 9 VD / RF OUT Backside Source / Ground Product Features • Frequency Range: DC - 18 GHz • 47.3 dBm Nominal PSAT at 3 GHz • 69.5% Maximum PAE • 19.8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.82 x 2.48 x 0.10 mm General Description The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5 % which makes the TGF2023-2-10 appropriate for high efficiency applications. Lead-free and RoHS compliant |
Similar Part No. - TGF2023-2-10_15 |
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Similar Description - TGF2023-2-10_15 |
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