TGF2023-2-20_15 datasheet(9/14 Pages) TRIQUINT

Part #	TGF2023-2-20

Description	90 Watt Discrete Power GaN on SiC HEMT

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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9 / 14 page

TGF2023-2-20

90 Watt Discrete Power GaN on SiC HEMT

Datasheet: Rev C 09-27-13

- 9 of 14 -

Disclaimer: Subject to change without notice

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Model Efficiency Tuned Data

Simulated signal: 10% pulses.

Source Γ : fo: 0.91∠131°, 2fo: 0, 3fo: 0

Load Γ : fo: 0.36∠114°, 2fo: 0, 3fo: 0

Source Γ : fo: 0.91∠131°, 2fo: 0, 3fo: 0

Load Γ : fo: 0.35∠117°, 2fo: 0, 3fo: 0

Source Γ : fo: 0.84∠135°, 2fo: 0, 3fo: 0

Load Γ : fo: 0.43∠80°, 2fo: 0, 3fo: 0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

5

10

15

20

25

30

35

40

45

50

-5

0

5

10

15

20

25

30

35

Input Power (dBm)

Pout & Drain Current vs. Input Power

Temp.=+25°C

V

D=12 V, IDQ=400 mA

Freq.=3 GHz, Efficiency Tuned

Model Without Bond Wires

Pout

I

D

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

-5

0

5

10

15

20

25

30

35

Input Power (dBm)

Gain & PAE vs. Input Power

Temp.=+25°C

V

D=12 V, IDQ=400 mA

Freq.=3 GHz, Efficiency Tuned

Model Without Bond Wires

Gain

PAE

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

5

10

15

20

25

30

35

40

45

50

-5

0

5

10

15

20

25

30

35

Input Power (dBm)

Pout & Drain Current vs. Input Power

Temp.=+25°C

V

D=12 V, IDQ=1000 mA

Freq.=3 GHz, Efficiency Tuned

Model Without Bond Wires

Pout

I

D

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

-5

0

5

10

15

20

25

30

35

Input Power (dBm)

Gain & PAE vs. Input Power

Temp.=+25°C

V

D=12 V, IDQ=1000 mA

Freq.=3 GHz, Efficiency Tuned

Model Without Bond Wires

Gain

PAE

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

0

5

10

15

20

25

30

35

40

45

50

55

-5

0

5

10

15

20

25

30

35

Input Power (dBm)

Pout & Drain Current vs. Input Power

Temp.=+25°C

V

D=28 V, IDQ=400 mA

Freq.=3 GHz, Efficiency Tuned

Model Without Bond Wires

Pout

I

D

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

-5

0

5

10

15

20

25

30

35

Input Power (dBm)

Gain & PAE vs. Input Power

Temp.=+25°C

V

D=28 V, IDQ=400 mA

Freq.=3 GHz, Efficiency Tuned

Model Without Bond Wires

Gain

PAE

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