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HAT2141H Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # HAT2141H
Description  Silicon N Channel Power MOS FET Power Switching
Download  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2141H Datasheet(HTML) 5 Page - Renesas Technology Corp

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HAT2141H
Rev.7.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
20
0
4
8
12
16
0
2
468
10
20
0
4
8
12
16
02468
10
25°C
–25°C
40
0
10
20
30
0
50
100
150
200
VDS = 10 V
Pulse Test
10 V
4.5 V
4.0 V
3.7 V
VGS = 3.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
100
10
1
0.1
0.01
0.1 0.3
1
3
30
300
10
100
1000
500
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
0
200
400
600
04
8
12
16
20
Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
100
20
50
2
5
10
1
0.2
1
5
0.1
0.5
2
10
1000
200
500
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25
°C)
1 ms
10
µs
100
µs
Operation in
this area is
limited by RDS (on)
Tc = 75°C
ID = 10 A
5 A
2 A
VGS = 7 V
10 V
Pulse Test


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