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HAT2189WP Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # HAT2189WP
Description  Silicon N Channel Power MOS FET Power Switching
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2189WP Datasheet(HTML) 5 Page - Renesas Technology Corp

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HAT2189WP
REJ03G1251-0200 Rev.2.00 Aug 28, 2009
Page 3 of 6
Main Characteristics
0
2
4
68
10
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
1100
10
0.1
1
0.01
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
02
4
68
10
16
12
20
4
8
0
16
12
20
4
8
0
0
0.2
0.4
0.6
1.0
0.8
1.2
-25
0
50
25
75
100 125 150
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
ID = 17 A
VGS = 10 V
Ta = 25
°C
Pulse Test
7 V
6 V
6.5 V
5.5 V
VGS = 5 V
10 V
Ta = 25
°C
Pulse Test
Tc = 25
°C
1 shot
Operation in this
area is limited by
RDS(on)
10
μs
PW
=
100
μs
8 V
9 V
VGS = 10 V
Pulse Test
4.3 A
8.5 A
Tc =
−25°C 25°C
VDS = 10 V
Pulse Test
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
080
4060
20
100
1000
10
100
1
VGS = 0
f = 1 MHz
Ta = 25
°C
Ciss
Coss
Crss
75
°C


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