BCR3AS-14B_15 datasheet(7/10 Pages) RENESAS

Part #	BCR3AS-14B

Description	Triac Low Power Use

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Manufacturer	RENESAS [Renesas Technology Corp]

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7 / 10 page

BCR3AS-14B

Preliminary

REJ03G1807-0100 Rev.1.00 Jul 22, 2009

Page 5 of 7

Rate of Rise of Off-State Voltage (V/

µs)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=125°C)

Rate of Rise of Off-State Voltage (V/

µs)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=150°C)

Breakover Voltage vs.

Junction Temperature

Junction Temperature (°C)

Commutation Characteristics (Tj=125°C)

Rate of Decay of On-State

Commutating Current (A/ms)

Commutation Characteristics (Tj=150°C)

Rate of Decay of On-State

Commutating Current (A/ms)

0

20

40

80

60

100

120

140

160

–60 –40–20 0 20 40 60 80 100 120

160

140

23 5 710

2

10

1

23 5 710

3

23 5 710

4

0

20

40

80

60

100

120

160

140

23 5 710

2

10

1

23 5 710

3

23 5 710

4

0

20

40

80

60

100

120

160

140

2

3

5

7

10

1

2

3

5

7

10

2

10

0

2

3

5

7

10

1

2

3

5

7

10

2

10

0

10

0

10

1

10

3

37

25

10

2

37

25

3

7

25

10

0

10

1

10

3

37

25

10

2

37

25

3

7

25

Typical Example

Tj = 125°C

III Quadrant

I Quadrant

Main Voltage

Main Current

IT

(di/dt)c

τ

VD

Time

(dv/dt)c

Typical Example

Tj = 125°C

IT = 4A

τ = 500µs

VD = 200V

f = 3Hz

Minimum

Characteristics

Value

I Quadrant

III Quadrant

Typical Example

Tj = 150°C

III Quadrant

I Quadrant

Main Voltage

Main Current

IT

(di/dt)c

τ

VD

Time

(dv/dt)c

Typical Example

Tj = 150°C

IT = 4A

τ = 500µs

VD = 200V

f = 3Hz

III Quadrant

I Quadrant

Minimum

Characteristics

Value

Gate Current Pulse Width (

µs)

Gate Trigger Current vs.

Gate Current Pulse Width

10

3

7

5

3

2

7

5

3

2

10

2

10

1

10

0

10

1

10

2

37

25

3

7

25

Typical Example

IFGT I

IRGT I

IRGT III

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