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2SK4151 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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2SK4151 Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 9 page 2SK4151 REJ03G1901-0100 Rev.1.00 Mar 15, 2010 Page 3 of 6 Main Characteristics 0 2.5 2.0 1.5 1.0 0.5 0 2 468 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 0.1 10 1 1 10 0.1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source Voltage VDS (V) Maximum Safe Operation Area Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) (1) 0 5 4 3 2 1 0 24 6 8 10 Ta = 25 °C Pulse Test VGS = 1.5 V VGS = 2.5 V 2 V 4 V 4 V 3 V VDS = 10 V Pulse Test Ta = 25 °C Pulse Test 75 °C 25 °C Tc = −25°C -25 0 50 25 75 100 125 150 0.001 0.01 0.1 1 10 0.1 1 10 100 500 Ta = 25 °C 1 shot Operation in this area is limited by RDS(on) 10 μs PW = 100 μs 5 4 3 2 1 0 2.5 V VGS = 4 V Pulse Test 0.5 A 0.2 A Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) (2) -25 0 50 25 75 100 125 150 5 4 3 2 1 0 ID = 1 A 0.5 A VGS = 2.5 V Pulse Test ID = 1 A 0.2 A |
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