TGF2819-FL

100W Peak Power, 20W Average Power,

32V DC

– 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev B- 03-03-15

- 8 of 21 -

Disclaimer: Subject to change without notice

© 2014 TriQuint

www.triquint.com

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the

impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances

listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.

Notes:

1.

2.

Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%

-0

.4

-0

.3

-0.2

-0.1

2.9GHz, Load-pull

51.6

51.4

51.2

13.3

13.3

12.8

12.3

62.2

60.2

58.2

Max Power is 51.6dBm

Max Gain is 13.6dB

Max PAE is 63.8%

Pin_ref = 20.6dBm

Power

Gain

PAE