TGF2819-FL datasheet(4/21 Pages) TRIQUINT

Part #	TGF2819-FL

Description	100W Peak Power, 20W Average Power

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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TGF2819-FL

100W Peak Power, 20W Average Power,

32V DC

– 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev B- 03-03-15

- 4 of 21 -

Disclaimer: Subject to change without notice

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RF Characterization

– Performance at 3.5GHz (1, 2)

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA

Symbol Parameter

Min

Typical

Max

Units

GLIN

Linear Gain

15.1

dB

P3dB

Output Power at 3 dB Gain Compression

126

W

PAE3dB

Power-Added Efficiency at 3 dB Gain Compression

49.2

%

G3dB

Gain at 3 dB Compression

12.1

dB

Notes:

1.

Pulse: 100µs PW, 20%

2.

Performance at 3.5GHz in the 3.1 to 3.5GHz Evaluation Board

RF Characterization

– Mismatched Ruggedness at 3.50 GHz (1, 2)

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA

Symbol Parameter

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Notes:

1. Input power established at P3dB at matched load at the output of 3.1

– 3.5 GHz Evaluation Board

2. Pulse: 100uS PW, 20%

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