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TGF2819-FL Datasheet(PDF) 4 Page - TriQuint Semiconductor |
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TGF2819-FL Datasheet(HTML) 4 Page - TriQuint Semiconductor |
4 / 21 page TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B- 03-03-15 - 4 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com RF Characterization – Performance at 3.5GHz (1, 2) Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA Symbol Parameter Min Typical Max Units GLIN Linear Gain 15.1 dB P3dB Output Power at 3 dB Gain Compression 126 W PAE3dB Power-Added Efficiency at 3 dB Gain Compression 49.2 % G3dB Gain at 3 dB Compression 12.1 dB Notes: 1. Pulse: 100µs PW, 20% 2. Performance at 3.5GHz in the 3.1 to 3.5GHz Evaluation Board RF Characterization – Mismatched Ruggedness at 3.50 GHz (1, 2) Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1 Notes: 1. Input power established at P3dB at matched load at the output of 3.1 – 3.5 GHz Evaluation Board 2. Pulse: 100uS PW, 20% |
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