TGF3020-SM_15 datasheet(2/23 Pages) TRIQUINT

Part #	TGF3020-SM

Description	5W, 32V, 4 ??6 GHz, GaN RF Input-Matched Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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2 / 23 page

TGF3020-SM

5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor

Datasheet: Rev A 09-26-14

- 2 of 23 -

Disclaimer: Subject to change without notice

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RF Characterization – Load Pull Performance at 4.0 GHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle

Symbol Parameter

Min

Typical

Max

Units

GLIN

Linear Gain, Power Tuned

12.6

dB

P3dB

Output Power at 3 dB Gain Compression, Power

Tuned

38.4

dBm

PAE3dB

Power-Added Efficiency at 3 dB Gain

Compression, Efficiency Tuned

60.1

%

G3dB

Gain at 3 dB Compression, Power Tuned

9.6

dB

RF Characterization – Load Pull Performance at 4.4 GHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle

Symbol Parameter

Min

Typical

Max

Units

GLIN

Linear Gain, Power Tuned

12.7

dB

P3dB

Output Power at 3 dB Gain Compression, Power

Tuned

38.3

dBm

PAE3dB

Power-Added Efficiency at 3 dB Gain

Compression, Efficiency Tuned

61.5

%

G3dB

Gain at 3 dB Compression, Power Tuned

9.7

dB

Absolute Maximum Ratings

Parameter

Value

Breakdown Voltage (BVDG)

100 V min.

Gate Voltage Range (VG)

-50 to 0 V

Drain Current (ID)

0.6 A

Gate Current (IG)

-1.25 to 2.1 mA

Power Dissipation (PD)

7.5 W

RF Input Power, CW,

T = 25°C (PIN)

30 dBm

Channel Temperature (TCH)

275 °C

Storage Temperature

-40 to 150 °C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device

at these conditions is not implied.

Recommended Operating Conditions

Parameter1

Value

Drain Voltage (VD)

32 V (Typ.)

Drain Quiescent Current (IDQ)

25 mA (Typ.)

Peak Drain Current ( ID)

326 mA (Typ.)

Gate Voltage (VG)

-2.7 V (Typ.)

Channel Temperature (TCH)

225 °C (Max)

Power Dissipation, CW (PD)

7.05 W (Max)

Power Dissipation, Pulse (PD)2

9.1 W (Max)

1 Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

2 100uS Pulse Width, 20% Duty Cycle

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TGF3020-SM Datasheet(PDF) 2 Page - TriQuint Semiconductor

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