TGF3021-SM_15 datasheet(2/33 Pages) TRIQUINT

Part #	TGF3021-SM

Description	30W, 32V, 0.03 ??4 GHz, GaN RF Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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2 / 33 page

TGF3021-SM

30W, 32V, 0.03 – 4 GHz, GaN RF Transistor

Datasheet: Rev A 2-27-15

- 2 of 33 -

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Absolute Maximum Ratings

Recommended Operating Conditions

Parameter

Value

Parameter

Value

Breakdown Voltage (BVDG)

100 V min.

Drain Voltage (VD)

32 V (Typ.)

Gate Voltage Range (VG)

-10 to 0 V

Drain Quiescent Current (IDQ)

65 mA (Typ.)

Drain Current (ID)

5.8 A

Peak Drain Current ( ID)

1800 mA (Typ.)

Gate Current (IG)

-7.5 to 16.8 mA

Gate Voltage (VG)

-2.7 V (Typ.)

Power Dissipation (PD)

32.3 W

Channel Temperature (TCH)

225 °C (Max)

RF Input Power, CW,

T = 25°C (PIN)

See page 10.

Power Dissipation, CW (PD)2

25.7 W (Max)

Channel Temperature (TCH)

275 °C

Power Dissipation, Pulse (PD)3

41.5 W (Max)

Storage Temperature

-40 to 150 °C

1 Electrical specifications are measured at specified test

conditions.

Specifications are not guaranteed over all recommended operating

conditions.

2 Package at 85 °C

3 100uS Pulse Width, 20 % Duty Cycle, package at 85 °C

Operation of this device outside the parameter ranges

given above may cause permanent damage. These are

stress ratings only, and functional operation of the device

at these conditions is not implied.

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TGF3021-SM Datasheet(PDF) 2 Page - TriQuint Semiconductor

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