TGF3021-SM-EVB1 datasheet(5/33 Pages) TRIQUINT

Part #	TGF3021-SM-EVB1

Description	30W, 32V, 0.03 ??4 GHz, GaN RF Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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5 / 33 page

TGF3021-SM

30W, 32V, 0.03 – 4 GHz, GaN RF Transistor

Datasheet: Rev A 2-27-15

- 5 of 33 -

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RF Characterization – 0.05 – 0.55 GHz EVB Performance at 0.25 GHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 65 mA, Signal: CW

Symbol Parameter

Min

Typical

Max

Units

GLIN

Linear Gain

21.8

dB

P1dB

Output Power at 1 dB Gain Compression

25.7

W

PAE1dB

Power-Added Efficiency at 3 dB Gain

Compression

52.4

%

G1dB

Gain at 3 dB Compression

20.8

dB

RF Characterization – Test Performance at 2.6 GHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 60 mA, Signal: 100uS Pulse Width, 20% Duty Cycle

Symbol Parameter

Min

Typical

Max

Units

P3dB

Output Power at 1 dB Gain Compression

21.4

W

DrE3dB

Drain Efficiency at 3 dB Gain Compression

65

%

G3dB

Gain at 3 dB Compression

14.3

dB

RF Characterization – Mismatch Ruggedness at 512 MHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 65 mA

Driving input power is determined at pulsed compression under matched condition at EVB output connector.

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

1

10:1

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TGF3021-SM-EVB1 Datasheet(PDF) 5 Page - TriQuint Semiconductor

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