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RJK6015DPK_15 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK6015DPK_15
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6015DPK_15 Datasheet(HTML) 3 Page - Renesas Technology Corp

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REJ03G1536-0200 Rev.2.00 Apr 18, 2007
Page 1 of 6
RJK6015DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1536-0200
Rev.2.00
Apr 18, 2007
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
S
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
21
A
Drain peak current
ID (pulse)
Note1
63
A
Body-drain diode reverse drain current
IDR
21
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note1
63
A
Avalanche current
IAP
Note3
6
A
Avalanche energy
EAR
Note3
1.9
mJ
Channel dissipation
Pch
Note2
150
W
Channel to case thermal impedance
θch-c
0.833
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. STch = 25
°C, Tch ≤ 150°C


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