GaN on SiC HEMT Pulsed Power Transistor

500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty

Rev. V2

MAGX-001214-500L00

MAGX-001214-500L0S

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1. Operation of this device above any one of these parameters may cause permanent damage.

3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.

Parameter

Limit

+65 V

-8 to -2 V

21.5 A

Absolute Max. Junction/Channel Temp

200ºC

Pulsed Power Dissipation at 85 ºC

583 W

0.30 ºC/W

Operating Temp

-40 to +95ºC

Storage Temp

-65 to +150ºC

Mounting Temperature

See solder reflow profile

ESD Min. - Charged Device Model (CDM)

1300 V

ESD Min. - Human Body Model (HBM)

4000 V

Correct Device Sequencing

Test Fixture Impedances

INPUT

NETWORK

Zif

OUTPUT

NETWORK

Zof

F (MHz)

1200

1.2 - j1.2

1.8 + j0.5

1250

1.2 - j0.9

1.9 + j0.4

1300

1.3 - j0.6

2.0 + j0.3

1350

1.4 - j0.3

1.9 + j0.2

1400

1.6 + j0.0

1.7 + j0.1

Turning the device ON

4. Apply RF power to desired level.

Turning the device OFF

1. Turn the RF power off.