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RJK6029DJA Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK6029DJA Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1895-0100 Rev.1.00 Page 1 of 6 Jun 18, 2010 Preliminary Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 1. Source 2. Drain 3. Gate 3 2 1 D S G Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS ±30 V Drain current ID 0.2 A Drain peak current ID (pulse) Note1 0.8 A Body-drain diode reverse drain current IDR 0.2 A Body-drain diode reverse drain peak current IDR (pulse) Note1 0.8 A Channel dissipation Pch 0.75 W Channel to ambient thermal impedance ch-a 166.7 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% REJ03G1895-0100 Rev.1.00 Jun 18, 2010 |
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