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TQP3M9018 Datasheet(PDF) 2 Page - TriQuint Semiconductor

Part # TQP3M9018
Description  High Linearity LNA Gain Block
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

TQP3M9018 Datasheet(HTML) 2 Page - TriQuint Semiconductor

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TQP3M9018
High Linearity LNA Gain Block
Datasheet: Rev. L 9/5/13
- 2 of 10 -
Disclaimer: Subject to change without notice
© 2013 TriQuint
www.triquint.com
Recommended Operating Conditions
Parameter
Min Typ Max Units
Supply Voltage (VDD)
+3.0
+5.0
+5.25
V
TCASE
−40
+85
°C
Tj for >106 hours MTTF
+190
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
−65 to 150°C
RF Input Power, CW, 50Ω, T=25°C
+23 dBm
Supply Voltage (VDD)
+7 V
Reverse Supply Voltage
-0.3 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted:
VDD=+5V, Temp.=+25°C, 50 Ω system
Parameter
Conditions
Min
Typ
Max
Units
Operational Frequency Range
20
4000
MHz
Test Frequency
1900
MHz
Gain
19
20.5
22
dB
Input Return Loss
16
dB
Output Return Loss
19
dB
Output P1dB
+21
dBm
Output IP3
Pout=+3 dBm/tone, ∆f = 1 MHz
+33
+37
dBm
Noise Figure
1.3
dB
Current, IDD
85
100
mA
Thermal Resistance, θjc
Module (junction to case)
38.7
°C/W


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