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2SC4550 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SC4550 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page Data Sheet D15596EJ2V0DS 2 2SC4550 ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector to emitter voltage VCEO(SUS) IC = 4.0 A, IB = 0.4 A, L = 1 mH 60 V Collector to emitter voltage VCEX(SUS) IC = 4.0 A, IB1 = −IB2 = 0.4 A, VBE(OFF) = −1.5 V, L = 180 µH, clamped 60 V Collector cutoff current ICBO VCB = 60 V, IE = 0 10 µA Collector cutoff current ICER VCE = 60 V, RBE = 50 Ω, Ta = 125°C 1.0 mA Collector cutoff current ICEX1 VCE = 60 V, VBE(OFF) = −1.5 V 10 µA Collector cutoff current ICEX2 VCE = 60 V, VBE(OFF) = −1.5 V, Ta = 125 °C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10 µA DC current gain hFE1*VCE = 2.0 V, IC = 0.7 A 100 DC current gain hFE2*VCE = 2.0 V, IC = 1.5 A 100 200 400 DC current gain hFE3*VCE = 2.0 V, IC = 4.0 A 60 Collector saturation voltage VCE(sat)1*IC = 4.0 A, IB = 0.2 A 0.3 V Collector saturation voltage VCE(sat)2*IC = 6.0 A, IB = 0.3 A 0.5 V Base saturation voltage VBE(sat)1*IC = 4.0 A, IB = 0.2 A 1.2 V Base saturation voltage VBE(sat)2*IC = 6.0 A, IB = 0.3 A 1.5 V Collector capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 100 pF Gain bandwidth product fT VCE = 10 V, IC = 1.0 A 150 MHz Turn-on time ton 0.1 0.3 µs Storage time tstg 1.0 1.5 µs Fall time tf IC = 4.0 A, RL = 12.5 Ω, IB1 = −IB2 = 0.2 A, VCC ≅ 50 V Refer to the test circuit. 0.1 0.3 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform |
Similar Part No. - 2SC4550_15 |
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Similar Description - 2SC4550_15 |
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