BCR16CS_15 datasheet(11/14 Pages) RENESAS

Part #	BCR16CS

Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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11 / 14 page

Mar. 2002

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR16CS

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

The product guaranteed maximum junction

temperature 150

°C (See warning.)

23

102

57 103

1.6

0

23

10–1

57 100 23 5 7 101 23 5 7 102

0.8

0.6

0.4

0.2

1.0

1.2

1.4

40

30

15

10

5

35

25

20

0

20

0

24

8

6

1012141618

100

23

101

57 102 23 5 7 103 23 5 7 104

3

2

101

7

5

3

2

7

5

7

5

3

2

10–1

VGD = 0.1V

PGM = 5W

PG(AV) = 0.5W

VGM = 10V

VGT = 1.5V

IGM = 2A

IFGT I, IRGT I, IRGT III

101

103

7

5

3

2

–60

–20

20

102

7

5

3

2

60

100

140 160

4

–40

0

40

80

120

101

103

7

5

3

2

–60

–20

20

102

7

5

3

2

60

100

140 160

4

–40

0

40

80

120

IFGT I, IRGT I

IRGT III

40

12

10

8

160

120

100

60

20

0

20

0

80

140

2

4

614 16 18

GATE CURRENT (mA)

GATE CHARACTERISTICS

(

Ι, ΙΙ AND ΙΙΙ)

TYPICAL EXAMPLE

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (

°C)

TYPICAL EXAMPLE

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (

°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(JUNCTION TO CASE)

CONDUCTION TIME

(CYCLES AT 60Hz)

360

°

CONDUCTION

RESISTIVE,

INDUCTIVE

LOADS

MAXIMUM ON-STATE POWER

DISSIPATION

RMS ON-STATE CURRENT (A)

CURVES APPLY

REGARDLESS

OF CONDUCTION ANGLE

360

°

CONDUCTION

RESISTIVE,

INDUCTIVE

LOADS

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

RMS ON-STATE CURRENT (A)

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