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DCR1650C65 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR1650C65 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 10 page SEMICONDUCTOR DCR1650C65 6/10 www.dynexsemi.com 0 25 50 75 100 125 0 500 1000 1500 2000 2500 3000 3500 4000 Mean on -state current, IT(AV) - (A) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 2000 2500 3000 3500 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 2000 2500 3000 3500 Mean on-state current, I T(AV) - (A) d.c. 180 120 90 60 30 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 Time - ( s ) Double Side Cooling Anode Side Cooling Cathode Sided Cooling Zth = [Ri x ( 1-exp. (t/ti))] R th(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Anode Side Cooling Cathode Sided Cooling Zth (z) Zth (z) Zth (z) ° sine. rect. ° sine. rect. ° sine. rect. 180 1.95 1.26 180 1.95 1.26 180 1.95 1.26 120 2.32 1.89 120 2.32 1.89 120 2.31 1.88 90 2.74 2.27 90 2.74 2.27 90 2.72 2.26 60 3.14 2.70 60 3.14 2.70 60 3.12 2.68 30 3.46 3.19 30 3.46 3.19 30 3.43 3.17 15 3.61 3.47 15 3.62 3.47 15 3.58 3.44 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 1 2 3 4 Double side cooled Ri (°C/kW) 1.1043 2.576 4.5096 1.9009 Ti (s) 0.006176 0.0517916 0.3820376 1.06 Anode side cooled Ri (°C/kW) 1.0977 2.4566 4.0469 9.9994 Ti (s) 0.006153 0.050142 0.3129407 5.27 Cathode side cooled Ri (°C/kW) 1.1519 2.8926 2.4064 17.4793 Ti (s) 0.006389 0.0582953 0.3775516 3.97 Zth = [Ri x ( 1-exp. (t/ti))] [1] |
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Similar Description - DCR1650C65_15 |
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