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FS30KM-2 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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FS30KM-2 Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 7 page  Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KM-2 HIGH-SPEED SWITCHING USE 0 10 20 30 40 50 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) 100 3 5 7 101 2 3 5 7 102 2 3 5 7 100 35 7 2 101 35 7 2 102 35 7 2 3 23 tw = 10 ms TC = 25°C Single Pulse 100 ms 10ms 1ms DC 0 10 20 30 40 50 012345 VGS = 20V 10V 8V 7V 5V 6V TC = 25°C Pulse Test PD = 25W 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 VGS = 20V 8V 7V 6V 5V TC = 25°C Pulse Test PD = 25W 10V PERFORMANCE CURVES ELECTRICAL CHARACTERISTICS (Tch = 25 °C) V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr V µA mA V m Ω V S pF pF pF ns ns ns ns V °C/W ns 100 — — 2.0 — — — — — — — — — — — — — — — — 3.0 69 1.04 18 1250 230 105 25 60 60 50 1.0 — 95 — ±0.1 0.1 4.0 100 1.50 — — — — — — — — 1.5 5.0 — Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50 Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/ µs |
Similar Part No. - FS30KM-2_15 |
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Similar Description - FS30KM-2_15 |
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