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2SJ624 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # 2SJ624
Description  P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ624 Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet D15890EJ1V0DS
4
2SJ624
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
-4
-8
-12
-16
-20
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
Pulsed
−2.5 V
VGS =
−4.5 V
−1.8 V
VDS - Drain to Source Voltage - V
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
VDS =
−10 V
Pulsed
TA = 125°C
75°C
25°C
−25°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-0.2
-0.4
-0.6
-0.8
-1
-50
0
50
100
150
VDS =
−10 V
ID =
−1.0 mA
Tch - Channel Temperature -
°C
0.1
1
10
100
-0.01
-0.1
-1
-10
VDS =
−10 V
Pulsed
TA =
−25°C
25°C
75°C
125°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
40
60
80
100
-50
0
50
100
150
Pulsed
VGS =
−1.8 V, ID = −1.5 A
VGS =
−4.5 V, ID = −2.5 A
VGS =
−2.5 V, ID = −2.5 A
Tch - Channel Temperature - °C
20
40
60
80
100
0
-2-4-6-8
Pulsed
ID =
−2.5 A
VGS - Gate to Source Voltage - V


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