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FP1 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # FP1
Description  on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FP1 Datasheet(HTML) 3 Page - Renesas Technology Corp

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1998
©
Document No. D16181EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
FP1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Up to 0.7 A current drive available
On-chip bias resistor
Low power consumption during drive
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FP1 SERIES LISTS
Products
Marking
R1 (K
Ω)R2 (KΩ)
FP1A4A
S30
10
FP1L2Q
S31
0.47
4.7
FP1A3M
S32
1.0
1.0
FP1F3P
S33
2.2
10
FP1J3P
S36
3.3
10
FP1L3N
S34
4.7
10
FP1A4M
S35
10
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−25
V
Collector to emitter voltage
VCEO
−25
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−0.7
A
Collector current (Pulse)
IC(pulse) *
−1.0
A
Base current (DC)
IB(DC)
−20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %


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