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NP60N03KUG Datasheet(PDF) 4 Page - Renesas Technology Corp |
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NP60N03KUG Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page  Data Sheet D16860EJ1V0DS 2 NP60N03KUG ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 3.0 4.0 V Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 30 A 10 21 S Drain to Source On-state Resistance Note RDS(on) VGS = 10 V, ID = 30 A 3.6 4.8 m Ω Input Capacitance Ciss VDS = 25 V 3500 5300 pF Output Capacitance Coss VGS = 0 V 400 600 pF Reverse Transfer Capacitance Crss f = 1 MHz 260 470 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 30 A 32 70 ns Rise Time tr VGS = 10 V 52 130 ns Turn-off Delay Time td(off) RG = 0 Ω 73 150 ns Fall Time tf 12 30 ns Total Gate Charge QG VDD = 24 V 62 93 nC Gate to Source Charge QGS VGS = 10 V 14 nC Gate to Drain Charge QGD ID = 60 A 21 nC Body Diode Forward Voltage Note VF(S-D) IF = 60 A, VGS = 0 V 0.9 1.5 V Reverse Recovery Time trr IF = 60 A, VGS = 0 V 38 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 41 nC Note Pulsed TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% µ |
Similar Part No. - NP60N03KUG_15 |
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Similar Description - NP60N03KUG_15 |
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