NP90N04PUF_15 datasheet(3/9 Pages) RENESAS

Part #	NP90N04PUF

Description	SWITCHING N-CHANNEL POWER MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D16717EJ1V0DS00 (1st edition)

Date Published January 2004 NS CP(K)

Printed in Japan

NP90N04PUF

2003

DESCRIPTION

The NP90N04PUF is N-channel MOS Field Effect

Transistor designed for high current switching

applications.

FEATURES

• Channel temperature 175°C rating

• Super low on-state resistance

RDS(on) = 3.0 m

Ω MAX. (VGS = 10 V, ID = 45 A)

• Low Ciss: Ciss = 6500 pF TYP. (VDS = 25 V, VGS = 0 V)

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±90

A

Drain Current (pulse)

Note1

ID(pulse)

±360

A

Total Power Dissipation (TA = 25

°C)

PT1

1.8

W

Total Power Dissipation (TC = 25

°C)

PT2

220

W

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Repetitive Avalanche Current

Note2

IAR

68

A

Repetitive Avalanche Energy

Note2

EAR

462

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. VDD = 20 V, RG = 25

Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C)

0.68

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

83.3

°C/W

ORDERING INFORMATION

PART NUMBER

PACKAGE

NP90N04PUF

TO-263 (MP-25ZP)

(TO-263)

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