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MMBT2907A Datasheet(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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MMBT2907A Datasheet(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 2 page  ＷＥＪ ＥＬＥＣＴＲＯＮＩＣ ＣＯ．，ＬＴＤ MMBT2907A TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F MAXIMUM RATINGS( TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Dissipation 0.225 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 n A Collector cut-off current ICE0 VCE=-30V,VEB(0ff)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA hFE(1) VCE=-10V,IC=-0.1mA 75 hFE(2) VCE=-10V,IC=-1mA 100 hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 300 DC current gain hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat) IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1.6 V VBE(sat) IC=-150mA,IB=-15mA -1.3 V Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50mA -2.6 V Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz Delay time td 10 nS Rise time tr VCC=-30V,IC=-150mA IB1=- 15mA 25 nS Storage time tS 225 nS Fall time tf VCC=-6V,IC=-150mA,IB1=-IB2=-15mA 60 nS SOT-23 1. BASE 2. EMITTER 3. COLLECTOR M M B T 2 9 0 7 A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO.,LTD RoHS |
Similar Part No. - MMBT2907A_15 |
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Similar Description - MMBT2907A_15 |
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