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PA1809 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # PA1809
Description  N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PA1809 Datasheet(HTML) 6 Page - Renesas Technology Corp

  PA1809_15 Datasheet HTML 1Page - Renesas Technology Corp PA1809_15 Datasheet HTML 2Page - Renesas Technology Corp PA1809_15 Datasheet HTML 3Page - Renesas Technology Corp PA1809_15 Datasheet HTML 4Page - Renesas Technology Corp PA1809_15 Datasheet HTML 5Page - Renesas Technology Corp PA1809_15 Datasheet HTML 6Page - Renesas Technology Corp PA1809_15 Datasheet HTML 7Page - Renesas Technology Corp PA1809_15 Datasheet HTML 8Page - Renesas Technology Corp  
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Data Sheet G16273EJ1V0DS
4
µµµµPA1809
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
8
16
24
32
0
0.5
1.0
1.5
2.0
Pulsed
4.0 V
VGS = 10 V
4.5 V
0.0001
0.001
0.01
0.1
1
10
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Pulsed
VDS = 10 V
TA = 125°C
75°C
25°C
−25°C
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50
0
50
100
150
VDS = 10 V
ID = 1.0 mA
0.1
1
10
100
0.01
0.1
1
10
100
Pulsed
VDS = 10 V
TA =
−25°C
25
°C
75
°C
125
°C
Tch - Channel Temperature -
°CID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
-50
0
50
100
150
Pulsed
ID = 4.0 A
10 V
VGS = 4.0 V
4.5 V
0
10
20
30
40
50
024
68
10
Pulsed
ID = 4.0 A
Tch - Channel Temperature -
°C
VGS - Gate to Source Voltage - V


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