PA1950_15 datasheet(5/10 Pages) RENESAS

Part #	PA1950

Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet G15620EJ2V0DS

3

µµµµPA1950

TYPICAL CHARACTERISTICS (TA = 25°C)

30

150

60

90

20

60

80

40

0

100

120

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TA - Ambient Temperature - ˚C

0

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VDS =

−10 V

ID =

−1 mA

−50

50

100

0

150

−1.5

−1.0

−0.5

0.0

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

−0.2

0.0

−0.8

−1.0

−0.4

−0.6

−10

−2

−4

−6

−8

0

Pulsed

−4.0 V

VGS =

−4.5 V

−2.5 V

−1.8 V

−0.01

−0.001

−0.0001

−0.00001

−0.5

0

−1.0

−1.5

−2.0

−100

−10

−1

−0.1

−25˚C

25˚C

75˚C

TA = 125˚C

VGS - Gate to Sorce Voltage - V

VDS =

−10 V

FORWARD TRANSFER CHARACTERISTICS

−1

−10

−100

−0.1

VDS =

−10V

ID - Drain Current - A

1

10

0.1

0.01

−0.01

100

TA = 125˚C

75˚C

25˚C

−25˚C

FORWARD TRANSFER ADMITTANCE Vs.

DRAIN CURRENT

FORWARD BIAS SAFE OPERATING AREA

−10

−100

−1

VDS - Drain to Source Voltage - V

−100

−10

−1

−0.1

−0.01

100 ms

5 s (1 unit)

5 s (2 units)

10 ms

PW = 1 ms

R

DS(on)

Limited

(V

GS

= −

4.5

V)

ID (pulse)

ID (DC)

Single Pulse

Mounted on 250 mm x 35

µm Copper Pad

Connected to Drain Electrode in

50 mm x 50 mm x 1.6 mm FR-4 Board

2

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