NPT1012_15 datasheet(3/8 Pages) MA-COM

Part #	NPT1012

Description	25W RF Power Transistor

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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NPT1012

NDS-025 Rev. 3, April 2013

NPT1012

Page 3

Table 1: Optimum Source and Load Impedances1 for CW Gain, Drain Efficiency, and Output Power Performance

Load-Pull Data, Reference Plane at Device Leads

VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted

Figure 3 - Optimum Impedances for CW

Performance, VDS = 28V

Frequency

(MHz)

VDS

(V)

ZS

(W)

ZL

(W)

PSAT

(W)

GSS

(dB)

Drain Efficiency @ PSAT

(%)

500

14

7.0 + j8.2

8.6 + j7.4

12

27.8

76

500

22

7.0 + j8.2

9.7+ j11.3

21

29.2

74

500

28

7.0 + j8.2

9.7 + j14.1

26

29.7

68

900

14

5.8 + j3.1

6.8 + j4.7

12

22.4

74

900

22

5.8 + j3.1

9.6 + j5.3

24

23.3

74

900

28

5.8 + j3.1

9.8 + j 7.8

26

23.6

67

1800

28

3.5 - j3.6

6.9 + j2.0

26

18.4

69

2500

14

3.9 - j7.5

6.2 - j8.0

13

13.7

70

2500

22

4.8 - j7.0

5.5 - j4.1

19

14.9

69

2500

28

4.8 - j7.0

5.5 - j4.1

26

15.2

69

3000

28

5.3 - j8.8

5.3 - j6.4

26

13.2

66

3500

28

5.0 - j14.5

7.0 - j9.5

26

12.9

63

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

ZS is the source impedance

presented to the device.

ZL is the load impedance

presented to the device.

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