AN3994 datasheet(8/53 Pages) STMICROELECTRONICS

Part #	AN3994

Description	One of the bigger challenges

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Parasitic capacitances overview

AN3994

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Doc ID 022380 Rev 1

2

Parasitic capacitances overview

When dealing with high speed switching applications, the most critical MOSFET parameters

limiting its dynamic response are the parasitic capacitances.

Figure 5 shows the physical origin of the parasitic component in an N-channel Power

MOSFET:

Figure 5.

N-channel Power MOSFET structure and intrinsic capacitances

Figure 6.

Equivalent model of Power MOSFET intrinsic capacitances

Cgs is mainly due to the overlap between the gate and the source metallization (“3” and “4”

components in Figure 5 and 6). Capacitors “5” and “6” are MIS (metal-insulator-

semiconductor) capacitors between the gate and the p-body. The Cgs value is linked to the

geometry of the device and it's almost independent of the voltage applied.

AM10768v1

Source metal

4

Intermediate dielectric

4

Intermediate dielectric

2

1

5

6

4

3

Polysilicon gate

Gate oxide

N++ source

2

1

5

6

4

3

Polysilicon gate

Gate oxide

N++ source

2

5

P/P+ Body

2

5

P/P+ Body

7

N- drain

7

N- drain

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