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AN4209 Datasheet(PDF) 3 Page - STMicroelectronics |
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AN4209 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 19 page DocID023949 Rev 2 3/19 AN4209 STRVS parameters 1 STRVS parameters This section defines the electrical and thermal characteristics of the STRVS. 1.1 Electrical parameters Figure 1. Typical reverse characteristic VR = (IR) of an STRVS device Figure 1 shows the typical reverse characteristic given at two temperatures of an STRVS device. Stand-off voltage (VRM) The stand-off voltage is specified for I = IRM = 1 µA and Tj = 25 °C. Under these conditions, the device is still acting as an open circuit. This parameter is one of the key parameters in circuit protection. Breakdown voltage (VBR) The breakdown voltage corresponds to the voltage from which the STRVS starts to go into the avalanche region. This parameter is specified for I = IBR = 1 mA and Tj = 25 °C. The VBR parameter follows a linear variation with junction temperature as shown in Equation 1. Equation 1 Where TREF = reference temperature expressed in °C, generally given at 25 °C and T = temperature coefficient in 1/°C. I(A) V(V) 0 TJ2 >TJ1 TJ1= 25°C IBR(25°C)- 1mA IRM(25°C)- 1µA IPP(25°C) ( ) ) T (T 1 ) (T V ) (T V REF j T REF BR j BR - · + · = α |
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