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PH3135-90S Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # PH3135-90S
Description  Radar Pulsed Power Transistor
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

PH3135-90S Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

  PH3135-90S_15 Datasheet HTML 1Page - M/A-COM Technology Solutions, Inc. PH3135-90S_15 Datasheet HTML 2Page - M/A-COM Technology Solutions, Inc.  
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Radar Pulsed Power Transistor
90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
M/A-COM Products
Released, 10 Aug 07
PH3135-90S
1
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Frequency
Symbol
Min
Max
Units
Collector-Emitter Breakdown Voltage IC = 40mA
BVCES
65
-
V
Collector-Emitter Leakage Current
VCE = 40V
ICES
-
7.5
mA
Thermal Resistance
Vcc = 36V, Pout = 90W
F = 3.1, 3.3, 3.5 GHz
RTH(JC)
-
0.3
°C/W
Output Power
Vcc = 36V, Pout = 90W
F = 3.1, 3.3, 3.5 GHz
PIN
-
16
W
Power Gain
Vcc = 36V, Pout = 90W
F = 3.1, 3.3, 3.5 GHz
GP
7.5
-
dB
Collector Efficiency
Vcc = 36V, Pout = 90W
F = 3.1, 3.3, 3.5 GHz
η
C
35
-
%
Input Return Loss
Vcc = 36V, Pout = 90W
F = 3.1, 3.3, 3.5 GHz
RL
-
-6
dB
Load Mismatch Tolerance
Vcc = 36V, Pout = 90W
F = 3.1, 3.3, 3.5 GHz
VSWR-T
-
2:1
-
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
65
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
10.7
A
Power Dissipation @ +25°C
PTOT
580
W
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
TJ
200
°C
Outline Drawing


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