LBC857BDW1T1G_15 datasheet(3/6 Pages) LRC

Part #	LBC857BDW1T1G

Description	Dual General Purpose Transistors

Download	6 Pages

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

TYPICAL CHARACTERISTICS – LBC856

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

Figure 2. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-0.8

-1.0

-0.6

-0.2

-0.4

1.0

2.0

-0.1

-1.0

-10

-200

-0.2

0.2

0.5

-0.2

-1.0

-10

-200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = -5.0 V

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02

-1.0

-10

0

-20

-0.1

-0.4

-0.8

-0.2

-2.0

-10

-200

-1.0

TJ = 25°C

IC =

-10 mA

VCE = -5.0 V

TA = 25°C

0

-0.5

-2.0

-5.0

-20

-50 -100

-0.05

-0.2

-0.5

-2.0

-5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5

-5.0

-20

-50 -100

-55°C to 125°C

θVB for VBE

-2.0 -5.0

-20 -50 -100

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 6. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1 -0.2

-1.0

-50

2.0

-2.0

-10

-100

100

200

500

50

20

10

6.0

4.0

-1.0

-10

-100

VCE = -5.0 V

-0.5

-5.0

-20

TJ = 25°C

Cob

Cib

8.0

-50 mA

-200 mA

Rev.O 3/6

LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G

S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G

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