2SC5011_15 datasheet(4/9 Pages) RENESAS

Part #	2SC5011

Description	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet PU10515EJ01V0DS

2

2SC5011

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

−

1.0

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

1.0

µA

DC Current Gain

hFE

Note 1

VCE = 10 V, IC = 20 mA

50

120

250

−

RF Characteristics

Gain Bandwidth Product

fT

VCE = 10 V, IC = 20 mA

−

6.5

–

GHz

Insertion Power Gain

S21e2 VCE = 10 V, IC = 20 mA, f = 1.0 GHz

11

13

−

dB

Noise Figure

NF

VCE = 10 V, IC = 7 mA, f = 1.0 GHz

−

1.1

2.0

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 10 V, IE = 0 mA, f = 1.0 MHz

−

0.5

0.9

pF

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

EB

FB

GB

Marking

R26

R27

R28

hFE Value

50 to 100

80 to 160

125 to 250

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