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2SC5011 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SC5011 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page Data Sheet PU10515EJ01V0DS 2 2SC5011 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA − − 1.0 µA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 1.0 µA DC Current Gain hFE Note 1 VCE = 10 V, IC = 20 mA 50 120 250 − RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA − 6.5 – GHz Insertion Power Gain S21e2 VCE = 10 V, IC = 20 mA, f = 1.0 GHz 11 13 − dB Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1.0 GHz − 1.1 2.0 dB Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0 mA, f = 1.0 MHz − 0.5 0.9 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank EB FB GB Marking R26 R27 R28 hFE Value 50 to 100 80 to 160 125 to 250 |
Similar Part No. - 2SC5011_15 |
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Similar Description - 2SC5011_15 |
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